Nonvolatile memory device, semiconductor device, and method for operating semiconductor device

ABSTRACT

A nonvolatile memory device may include a plurality of cell strings including a plurality of memory cells serially coupled to one another; a plurality of bit lines coupled to a corresponding cell string of the plurality of cell strings; a plurality of page buffers each including a plurality of latches and coupled to a corresponding bit line of the plurality of bit lines; a first control circuit suitable for controlling the plurality of latches to perform an operation corresponding to an activated command signal of a plurality of command signals in an access operation; and a second control circuit suitable for activating one or more of the plurality of command signals, while controlling operations of the plurality of cell strings and the plurality of bit lines in the access operation.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority of Korean Patent. ApplicationNo. 10-2015-0167617, filed on Nov. 27, 2015, which is incorporatedherein by reference in its entirety.

BACKGROUND

1. Field

Exemplary embodiments of the present invention relate to a nonvolatilememory device, a semiconductor device including the nonvolatile memorydevice, and a method for operating the semiconductor device.

2. Description of the Related Art

FIG. 1 is a configuration diagram of a semiconductor device.

Referring to FIG. 1 the semiconductor device may include a controlcircuit 110 and a plurality of internal circuits 120_1 to 120_n.

The control circuit 110 may control the plurality of internal circuits120_1 to 120_n to perform predetermined operations., In more detail, thecontrol circuit 110 may generate a plurality of control signals CON<0:m>for controlling the plurality of internal circuits 120_1 to 120_n, andmay activate the plurality of control signals CON<0:m> in apredetermined order so that the plurality of internal circuits 120_1 to120_n perform an operation corresponding to a command CMD inputted froman external device of the semiconductor device.

In the semiconductor device, among the operations performed by theplurality of internal circuits 120_1 to 120_n, some operations could beperformed substantially simultaneously. However, when the plurality ofinternal circuits 120_1 to 120_n are operated using one control circuit110, since there is a limitation in the number of control signalsCON<0:m> which may be simultaneously controlled by the control circuit110, it is necessary to sequentially perform operations, which could beperformed simultaneously. As a result the operation time of thesemiconductor device is increased.

SUMMARY

Various embodiments are directed to a nonvolatile memory device, asemiconductor device including the nonvolatile memory device, and amethod for operating the semiconductor device, wherein a plurality ofinternal circuits of the semiconductor device are controlled using aplurality of control circuits and operations, which may be physicallyand performed simultaneously, thereby enabling a high speed operation.

In an embodiment, a nonvolatile memory device may include: a pluralityof cell strings including a plurality of memory cells serially coupledto one another; a plurality of bit lines coupled to a corresponding cellstring of the plurality of cell strings; a plurality of page bufferseach including a plurality of latches and coupled to a corresponding bitline of the plurality of bit lines; a first control circuit suitable forcontrolling the plurality of latches to perform an operationcorresponding to an activated command signal of a plurality of commandsignals in an access operation; and a second control circuit suitablefor activating one or more of the plurality of command signals, whilecontrolling operations of the plurality of cell strings and theplurality of bit lines in the access operation.

In another embodiment, a semiconductor device may include:

at least one first internal circuit suitable for performing apredetermined first operation when one or more first control signalsamong a plurality of first control signals are activated in apredetermined order; at least one second internal circuit suitable forperforming a predetermined second operation when one or second controlsignals among a plurality of second control signals are activated in apredetermined order; a first control circuit suitable for activating theone or more first control signals among the plurality of first controlsignals in a predetermined order in response to an activated commandsignal among a plurality of command signals; and a second controlcircuit suitable for activating the one or more among the plurality ofcommand signals while activating the one or more second control signalsamong the plurality of second control signals in a predetermined order,

In another embodiment, a method for operating a semiconductor deviceincluding first and second control circuits and a plurality of internalcircuits may include: activating, by the second control circuit, aplurality of second control signals in a predetermined order in responseto an external command, and activating one or more command signals amonga plurality of command signals at a predetermined time point;activating, by the first control circuit, a plurality of first controlsignals in a predetermined order in response to one or more activatedcommand signals among the plurality of command signals; performing, by afirst internal circuit among the plurality of internal circuits, apredetermined operation in response to the plurality of second controlsignals; and performing, by a second internal circuit among theplurality of internal circuits, a predetermined operation in response tothe plurality of first control signals.

According to the present technology, internal circuits of asemiconductor device are operated using a plurality of control circuitsand operations are performed simultaneously, so that it is possible toimprove the operation speeds of a nonvolatile memory device and thesemiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a configuration diagram of a conventional semiconductor deviceincluding a single control circuit controlling a plurality internalcircuits.

FIG. 2 is a block diagram of a semiconductor device, according to anembodiment of the present invention.

FIG. 3A and FIG. 3B are diagrams comparing an operation of aconventional semiconductor device with an operation of the semiconductordevice of FIG. 2.

FIG. 4 is a block diagram of a nonvolatile memory device, according toan embodiment of the present invention.

FIG. 5 is a diagram illustrating a part of an example configuration of acell array 450 of FIG. 4.

FIG. 6 is a diagram illustrating a part of an example configuration of apage buffer PB0 of FIG.4.

FIG. 7A is a flow diagram illustrating a program operation of anonvolatile memory device, according to an embodiment of the presentinvention.

FIG. 7B is a timing diagram illustrating a program operation of anonvolatile memory device, according to an embodiment of the presentinvention.

FIG. 8A is flow diagram illustrating a read operation of a nonvolatilememory device according to an embodiment of the present invention.

FIG. 8B is a timing diagram illustrating a read operation of anonvolatile memory device according to an embodiment of the presentinvention.

FIG. 9A is flow diagram illustrating an erase operation of a nonvolatilememory device, according to an embodiment of the present invention,

FIG. 9B is a timing diagram illustrating an erase operation of anonvolatile memory device, according to an embodiment of the presentinvention.

DETAILED DESCRIPTION

Various embodiments will be described below in more detail withreference to the accompanying drawings. The present invention may,however, be embodied in different forms and should not be construed aslimited to the embodiments set forth herein. Rather, these embodimentsare provided so that this disclosure will be thorough and complete, andwill fully convey the present invention to those skilled in the art.Throughout the disclosure, like reference numerals refer to like partsthroughout the various figures and embodiments of the present invention.It will be understood that, although the terms “first”, “second”,“third”, and so on may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are used to distinguish one element, component, region,layer or section from another element, component, region, layer orsection. Thus, a first element, component, region, layer or sectiondescribed below could be termed a second element, component, region,layer or section, without departing from the spirit and scope of thepresent disclosure.

It will be understood that when an element or layer is referred to asbeing “connected to”, or “coupled to” another element or layer, it canbe directly on, connected to, or coupled to the other element or layer,or one or more intervening elements or layers may be present.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the presentdisclosure. As used herein the singular forms “a” and “an” are intendedto include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises”, “comprising”, “includes”, and “including” when used in thisspecification, specify the presence of the stated features, integers,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers,operations, elements, components, and or groups thereof. As used hereinthe term “and or” includes any and all combinations of one or more ofthe associated listed items.

Unless otherwise defined, all terms including technical and scientificterms used herein have the same meaning as commonly understood by one ofordinary skill in the art to which this inventive concept belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning for exampleconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present disclosure Thepresent disclosure may be practiced without some or all of thesespecific details. In other instances, well-known process structuresand/or processes have not been described in detai in order not tounnecessarily obscure the present disclosure.

Hereinafter, various embodiments of the present disclosure will bedescribed in details with reference to attached drawings.

FIG. 2 is a block diagram of a semiconductor device 200, according to anembodiment of the present invention.

Referring to FIG. 2, the semiconductor device 200 may include a firstand second control circuits 210, 220, a plurality of first internalcircuits 230_1 to 230_m, and a plurality of second internal circuits240_1 to 240_n.

The first control circuit 210 may activate one or more of the pluralityof first control signals CON1<0:b> in a predetermined order in responseto a corresponding activated command signal of a plurality of commandsignals COM<0:a>. In each of the plurality of command signals COM<0:a>one or more first control signals and activation orders of correspondingfirst control signals have been set to correspond to each other.Accordingly, when a command signal is activated, the first controlcircuit 210 may activate first control signals corresponding to theactivated command signal in a preset order. The first control circuit210 may include a finite state machine (hereinafter, referred to asFSM). When a command signal is activated, the FSM may activatepredetermined signals at predetermined timings in a predetermined order.The plurality of first control signals CON1<0:b> may be control signalsfor controlling the first internal circuits 230_1 to 230_m.

The second control circuit 220 may activate one or more of a pluralityof second control signals CON2<0:c> in a predetermined order incorrespondence to command/address signals CA<0:k> inputted from anexternal device, and may activate one or more of the plurality ofcommand signals CCM<0:a> at predetermined timings. The second controlcircuit 220 may include a microcontroller (“MC”). The plurality ofsecond control signals CON2<0:c> may control the second internalcircuits 240_1 to 240_n.

Each of the first internal circuits 230_1 to 230_m may perform one ormore predetermined operations in response to a first control signalCON1<0:b>. Each of the second internal circuits 240_1 to 240_n mayperform one or more predetermined operations in response to a secondcontrol signal CON2<0:c>. The operations performed by the first andsecond internal circuits 230_1 to 230_m and 240_1 to 240_n may besub-operations constituting operations corresponding to thecommand/address signals CA<0:k> inputted to the semiconductor device200. The sub-operations performed by the first and the second internalcircuits 230_1 to 230_m and 240_1 to 240_n may be performed in apredetermined order. The sub-operations performed by the first andsecond internal circuits 230_1 to 230_m and may be performedsimultaneously. The sub-operations performed by the first and the secondinternal circuits 230_1 to 230_m and 240_1 to 240_n may at leastpartially overlap.

For example, a period in which the operations of the first internalcircuits 230_1 to 230_m controlled by the first control circuit 210 areperformed, and a period in which the operations of the second internalcircuits 240_1 to 240_n controlled by the second control circuit 220 areperformed, may at least partially overlap each other. Overlapping of theperiods, in which two operations are performed, means that at least apart of the two operations are performed simultaneously.

In the semiconductor device 200, the second control circuit 220 may be amain control circuit that controls the entire semiconductor device 200.The first control circuit 210 may be a sub-control circuit that controlsonly a part of the semiconductor device corresponding to itself. Hence,the semiconductor device 200 may separate the main control circuit fromthe sub-control circuit to generate all control signals of thesemiconductor device 200. This may in turn substantially reduce the sizeand or complexity of the main control circuit. Furthermore, thesemiconductor device 200, may perform simultaneously operations whichmay be performed simultaneously given the overall processing capabilityof the semiconductor device, thus reducing the overall operation timeand achieving a higher operational speed operation than the conventionalsemiconductor device of FIG, 1.

FIGS. 3A and 3B are diagrams comparing an operation of a conventionalsemiconductor device with an operation of the semiconductor device 200of FIG. 2. FIG. 3A is a diagram illustrating the operation of theconventional semiconductor device whereas FIG. 3B is a diagramillustrating the operation of the semiconductor device 200 of FIG. 2.

Hereinafter, the case, in which an operation A (OPERATION_A) includessub-operations 1 to 5 (SUB1 to SUB5) which are performed in apredetermined order, so that the operation A OPERATION_A is achieved,will be described. The entire periods or partial periods ofsub-operation 1 (SUB1) and sub-operation 2 (SUB2) may overlap eachother. Also, the entire periods or partial periods of sub-operation 3(SUB3) and sub-operation 4 (SUB4) may overlap each other.

Sub-operation 1 (SUB1), sub-operation 3 (SUB3), and sub-operation 5(SUB5) may be operations performed by the second internal circuits 240_1to 240_n under the control of the second control circuit 220, andsub-operation 2 (SUB2) and sub-operation 4 (SUB4) may be operationsperformed by the first internal circuits 230_1 to 230_m under thecontrol of the first control circuit 210.

Referring to FIG. 3A, the conventional semiconductor device maysequentially perform the sub-operations 1 to 5 (SUB1 to SUB5) in orderto perform the operation A (OPERATION_A) corresponding to apredetermined command. However, referring to FIG. 38, the i0semiconductor device 200 of FIG. 2, according to an embodiment of thepresent invention, may perform the sub-operations 1 to 5 (SUB1 to SUB5)in order to perform the operation A (OPERATION_A) in such a manner thatthe sub-operation 1 (SUB1) and the sub-operation 2 (SUB2) are performedduring at least partially overlapping periods and the sub-operation 3(SUBS) and the sub-operation 4 (SUB4) are performed, during at leastpartially overlapping periods.

For example, the second control circuit 220 may activate a commandsignal corresponding to the second sub-operation (SUB2) whilecontrolling the second internal circuits 240_1 to 240_n so that thefirst sub-operation (SUB1) is performed thereby allowing the firstcontrol circuit 210 to control the first internal circuits 230_1 to230_m so that the second sub-operation (SUB2) is performed, hence,allowing simultaneous performance of the first and second sub-operationsSUB1 and SUB2. Furthermore, the second control circuit 220 may activatea command signal corresponding to the fourth sub-operation (SUB4) whilecontrolling the second internal circuits 240_1 to 240_n so that thethird sub-operation (SUB3) is performed, thereby allowing the firstcontrol circuit 210 to control the first internal circuits 230_1 to230_m so that the fourth sub-operation (SUB4) is performed, hence,allowing simultaneous performance of the third and fourth sub-operationsSUB3 and SUB4.

Referring now to FIG. 4, a block diagram of a nonvolatile memory device400, according to an embodiment of the present invention, is provided.

Accordingly, the nonvolatile memory device 400 may include a firstcontrol circuit 410, a second control circuit 420, a voltage generationcircuit 430, a row decoder 440, a cell array 450, a page buffer group460, a column selection circuit 470, and an input/output circuit 480.

Hereinafter, the case, in which first to third latches L1 to L3 includedin a plurality of page buffers PB0 to By are a first internal circuitcontrolled by the first control circuit 410 and the other circuits 430,440, 450, 460, 470, and 480 included in the nonvolatile memory device400 are a second internal circuit controlled by the second controlcircuit 420, will be described as an example. The first control circuit410 may include a FSM and the second control circuit 420 may include aMC.

FIG. 5 is a diagram illustrating a part of an example configuration ofthe cell array 450 of FIG. 4.

Referring to FIG. 5, each cell array 450 may include a plurality ofstrings ST0 to STy coupled between bit lines BL0 to BLy and a commonsource line CSL. For example, the strings ST0 to STy may be coupled tocorresponding bit lines BL0 to BLy, respectively. The strings ST0 to STymay be commonly coupled to the common source line CSL. Each of thestrings ST0 to STy may include a source selection transistor SST havinga source coupled to the common source line CSL, a plurality of memorycells C00 to Cxy, and a drain selection transistor DST having a draincoupled to the bit lines BL0 to BLy. The memory cells C00 to Cxy may beserially coupled between the selection transistors SST and DST. A gateof the source selection transistor SST may be coupled to a sourceselection line SSL, gates of the memory cells C00 to Cxy may be coupledto word lines WL0 to WLx, respectively, and a gate of the drainselection transistor DST may be coupled to a drain selection line DSL.

FIG. 6 is a diagram illustrating part of an example configuration of thepage buffer PB0.

Referring to FIG. 6, the page buffer PB0 may include first to thirdlatches L1 to L3. The first latch L1 may store data inputted to the pagebuffer PB0 from an external device or data to be outputted to theexternal device from the page buffer PB0. The second latch L2 may storedata for controlling the bit line BL0 or data sensed in the bit lineBL0. The third latch L3 may store data to be maintained for apredetermined operation. The configurations and operations of the otherpage buffers PB1 to PBy may be identical or substantially the same asthose of the page buffer PB0 described in FIG. 6.

The first control circuit 410 may control the plurality of latches L1 toL3 of the plurality of page buffers PB0 to PBy so that an operationcorresponding to an activated command signal of a plurality of commandsignals COM<1:5> may be performed in the plurality of page buffers PB0to PBy. For example, the first control circuit 410 may generate theplurality of first control signals CON1<0:b>, and activate one or morefirst control signals corresponding to the activated command signal inan order corresponding to the activated command signal.

The second control circuit 420 may control the other elements 410, 430,440, 450, 460, 470, and 480 of the nonvolatile memory device 400 so thatthe nonvo at le memory device 400 may perform operations correspondingto commands CMDs inputted through the input/output circuit 480 from theexternal device. The commands CMDs may include a plurality of externalcommand signals, and a combination of the external command signals mayindicate the type of the command CMD. The commands CMDs may include aprogram command, a read command, and an erase command.

The second control circuit 420 may activate a VPGM_EN when the programcommand is inputted, activate a VRD_EN when the read command isinputted, and activate a VERA_EN when the erase command is inputtedThesecond control circuit 420 may activate a DIS when an operationcorresponding to a command is completed. The second control circuit 420may control the nonvolatile memory device 200 to perform at least one ofa program, read, and erase operations, and activate one or more of theplurality of command signals COM<1:5> so that the first control circuit410 controls the plurality of latches L1 to L3 in the page buffers PB0to PBy.

In an access operation, the second control circuit 420 may controlvoltages VPGMs, VRDs, and VERAs generated by the voltage generationcircuit 430 to be applied to the plurality of word lines WL0 to WLx, thesource selection line SSL, and the drain selection line DSL through therow decoder 440 as appropriate voltages. The access operation mayinclude at least one of the program, read, and erase operations.

The voltage generation circuit 430 may generate the plurality ofoperation voltages VPGMs, VRDs, and VERAs. The voltage generationcircuit 430 may activate one or more, program operation voltages VPGMswhen the VPGM_EN is activated. The voltage generation circuit 430 mayactivate one or more read voltages VRDs when the VRD_EN is activated.The voltage generation circuit 430 may activate one or more erasevoltages VERAs when the VERA_EN is activated. The VPGMs may indicate oneor more voltages used in the program operation, the VRDs may indicateone or more voltages used in the read operation, and the VERAs mayindicate one or more voltages used in the erase operation.

The row decoder 440 may transfer the operation voltages VPGMs, VRDs, andVERAs, which have been outputted from the voltage generation circuit430, to the lines DSL, WL0 to WLx, SSL, and CSL of the cell array 450 inresponse to a row address signal' RADD of the second control circuit420, The row address signal' RADD may be used to select a word line inthe program operation and the read operation. In other words, a wordline selected by the row address signal RADD and a non-selected line maybe distinguished from each other.

The page buffer group 460 may include the plurality of page buffers PB0to PBy coupled to the cell array 450 through the bit lines BL0 to BLy.Initialization and data transmission operations of the first to thirdlatches L1 to L3 included in the page buffers PB0 to PBy of the pagebuffer group 460 may be controlled by the plurality of first controlsignals CON1<0:b> while other operations may be controlled by pagebuffer control signals PB_CONTROLs generated by the second controlcircuit 420.

The column selection circuit 470 may select the page buffers PB0 to PByincluded in the page buffer group 460 in response to a column addressCADD outputted from the second control circuit 420. For example, in aprogram operation the column selection circuit 470 sequentiallytransfers data, which is to be programmed in memory cells of the cellarray 450, to the page buffers PB0 to PBy in response to the columnaddre CADD Furthermore, in a read operation the column selection circuit470 may sequentially select the page buffers PB0 to PBy in response tothe column address CADD so that data read from the cell array 450 andstored in the page buffers PB0 to PBy may be outputted to the externalof the nonvolatile memory device 400.

The input/output circuit 480 may receive the commands CMDs and addressesADDS from an external device coupled with the nonvolatile memory device200, and receive data to be programmed or output read data. In a programoperation, the input/output circuit 480 transfers data inputted from theexternal device to be programmed in memory cells of the cell array 450,to the column selection circuit 470. Furthermore, in a read operation,the input/output circuit 480 may output the data transferred from thecolumn selection circuit 470 to the external device.

Hereinafter, with reference to FIG. 7A, FIG. 7B, FIG, 8A, FIG. 8B, FIG.9A and FIG. 9B, an operation of the nonvolatile memory device 400 ofFIG. 4 will be further described,

FIG. 7A is a flow diagram illustrating a program operation of thenonvolatile memory device, according to an embodiment of the presentinvention. FIG. 7B is a timing diagram illustrating a program operationof the nonvolatile memory device, according to an embodiment of thepresent invention.

Referring to FIGS. 7A and 7B, the program operation may include a datainput operation S710 (DATA_in), a bit line first-precharqe operationS720 (BL_pcg1), a program pulse application operation S730 (PGM_pulse),a word line discharge operation S740 (WL_dcg) a word line rise operationS750 (WL_rise), a bit line second-precharge operation S760 (BL_pcg2), anevaluation operation S770 (EVAL), a bit line discharge operation S780(BL_dcg), and initialization and data transmission operations S701 toS705 (L1→L3, L2_rst, L3→L2, L2_rst, and L2→L3) of the first to thirdlatches L1 to L3.

In the data input operation S710 (DATA_in), the second control circuit420 may control data inputted through the input/output circuit 480 to bestored in the page buffers PB0 to PBy and sequentially activate a firstcommand signal COM<1> and a second command signal COM<2> atpredetermined time points. The first control circuit 410 may control(S701, L1→L3) data stored in the first latch L1 to be transmitted to andstored in the third latch L3 in response to the first command signalCOM<1>. The first control circuit 410 may control (S702, L2_rst) thesecond latch L2 to be initialized in response to the second commandsignal COM<2>. The initialization may represent that initial data isstored in the second latch L2.

In the bit line first-precharge operation S720 (BL_pcg1), the secondcontrol circuit 420 may control the bit lines BL0 to BLy, to which therespective page buffers PB0 to PBy correspond, to be precharged to avoltage level decided by data stored in the second latch L2. The secondcontrol circuit 420 may activate a third command signal COM<3> whileperforming an operation required for precharging a bit line. Theoperation required for precharging a bit line may include an operationin which a voltage for turning on the drain selection transistor DST isapplied to the drain selection line DSL, and an operation in which avoltage for turning off the source selection transistor SST is appliedto the source selection line SSL and a power supply voltage is appliedto the common source line CSL.

The first control circuit 410 may control (S703, L3→L2) the data storedin the third latch. L3 to be transmitted to and stored in the secondlatch L2 in response to the third command signal COM<3>. The secondcontrol circuit 420 may control the data stored in the third latch L3 tobe transmitted to the second latch L2 and then control a bit line to beprecharged to the voltage level decided by the data stored in the secondlatch L2.

A bit line coupled to a memory cell, for which program is permitted maybe precharged to a permission voltage (for example, 0 V), and a bit linecorresponding to a memory cell, for which program is prohibited, may beprecharged to a prohibition voltage (for example, VCC).

In the program pulse application operation S730 (PGMpulse), the secondcontrol circuit 420 may control a program pulse having a first voltagelevel to be applied to a selected word line and a pass voltage having asecond voltage level for turning on a memory cell to be applied to aunselected word line. As a consequence, a threshold voltage of thememory cell, for which program is permitted, may increase.

In the word line discharge operation S740 (WL_dcg), the second controlcircuit 420 may control the charge of a word line having a voltage levelincreased due to the application of the program pulse and the turn-onvoltage to be discharged and a voltage of the word line to be lowered.

Then, the second control circuit 420 may perform a verificationoperation in order to confirm whether a memory cell has been programmed.In the word line rise operation 5750 (WL_rise), the second controlcircuit 420 may activate the second command signal COM<2> whilecontrolling different voltages to be applied to the selected word lineand the unselected word line. The first control circuit 410 may initalize (S704, L2_rst) the second latch L2, in response to the firstcommand signal COM<1>.

In the bit line second-precharge operation S760 (BL_pcg2), the secondcontrol circuit 420 may control a bit line to be precharged to apredetermined voltage level. Unlike the bit line first-prechargeoperation S720 (BL_pcg1), in the bit line second-precharge operationS760 (BL_pcg2), all bit lines may be precharged to substantially thesame voltage level.

In the evaluation operation S770 (EVAL), the second control circuit 420may control a voltage for turning on the selection transistors DST andSST to be applied to the selection lines DSL and SSL, control a groundvoltage to be applied to the common source line CSL, control a voltagefor verifying a target program level to be applied to the word lines WL0to WLx, sense data of a memory cell selected through a bit line after apredetermined time lapses, and activate a fourth command signal COM<4>while controlling the data to be stored in the second latch L2. When thefourth command signal COM<4> is activated, the first control circuit 410may control (S705, L2→L3) the data of the second latch L2 to betransmitted to and stored in the third latch L3. The transmission of thedata may be performed after the data of the memory cell sensed throughthe bit line is stored in the second latch L2.

In the bit line discharge operation S780 (BL_dcg), the second controlcircuit 420 may control all bit lines precharged for evaluation to bedischarged to a predetermined voltage level. Then, the second controlcircuit 420 may determine whether programming of a memory cell has beencompleted according to the value of the data stored in the third latchL3 and repeat or end the program operation according to thedetermination result.

FIG. 8A is a flow diagram illustrating a read operation of thenonvolatile memory device, according to an embodiment of the presentinvention. FIG. 8B is a timing diagram for a read operation of thenonvolatile memory device, according to an embodiment of the presentinvention.

Referring to FIGS. 8A and 8B, the read operation may include a word linerise operation S810 (WL_rise), a bit line second-precharge operationS820 (BL_pcg2), an evaluation operation S830 (EVAL), a bit linedischarge operation S840 (BL_dcg) a data output operation S850(DATA_out), and initialization and data transmission operations S801 toS803 (L2_rst, L2→L3, and L3→L1) of the first to third latches L1 to L3.

In the word line rise operation S810 (WL_rise) the second controlcircuit 420 may activate the second command signal COM<2> whilecontrolling different voltages to be applied to a selected word line andan unselected word line. The first control circuit 410 may initialize(S801, L2_rst) the second latch L2 in response to the second commandsignal COM<2>.

In the bit line second-precharge operation S820 (BL_pcg2), the secondcontrol circuit 420 may control a bit line to be precharged to apredetermined voltage level. In the bit line second-precharge operationS820 (BL_pcg2), all bit lines may be precharged to substantially thesame voltage level.

In the evaluation operation S830 (EVAL) the second control circuit 420may control a voltage for turning on the selection transistors DST andSST to be applied to the selection lines DSL and SSL, control a groundvoltage to be applied to the common source line CSL, control a voltagefor verifying a target program level to be applied to the word lines WL0to WLx, sense data of a memory cell selected through a bit line after apredetermined time lapses, and activate the fourth command signal COM<4>while controlling the data to be stored in the second latch L2. When thefourth command signal COM<4> is activated the first control circuit 410may control (S802, L2→L3) the data of the second latch L2 to betransmitted to and stored in the third latch L3. The transmission of thedata may be performed after the data of the memory cell sensed throughthe bit line is stored in the second latch L2.

In the bit line discharge operation S840 (BL_dcg), the second controlcircuit 420 may control all bit lines precharged for evaluation to bedischarged to a predetermined voltage level.

In the data output operation S850 (DATA_out), the second control circuit420 may control the data stored in the page buffers PB0 to PBy (i.e.,the data stored in the first latch L1) to be outputted to an externaldevice coupled with the nonvolatile memory device 400 through theinput/output circuit 480 and control a fifth command signal COM<5> to beactivated. The first control circuit 410 may control (S803, L3→L1) thedata stored in the third latch L3 to be transmitted to and stored in thefirst latch L1 in response to the fifth command signal COM<5>. S803 isperformed by the second control circuit 420 before the data is outputtedfrom the first latch L1, so that the data outputted from the first latchL1 may be data sensed through the evaluation operation S830 (EVAL).

FIG. 9A is a flow diagram illustrating an erase operation of thenonvolatile memory device, according to an embodiment of the presentinvention. FIG. 9B is a timing diagram for an erase operation of thenonvolatile memory device, according to an embodiment of the presentinvention.

Referring to FIGS. 9A and 9B, the erase operation may include an erasepulse application operation S910 (ERA_pulse), a word line rise operationS920 (WL_rise), a bit line second-precharge operation S930 (BL_pcg2), anevaluation operation S940 (EVAL), a bit line discharge operation S950(BL_dcg), and initialization and data transmission operations S901 andS902 (L2_rst and L2→L3) of the first to third latches L1 to L3.

In the erase pulse application operation S910 (ERA_pulse), the secondcontrol circuit 420 may control the selection lines DSL and SSL to be ina floating state, control an erase permission voltage (for example, 0 V)to be applied to the word lines WL0 to WLx, and control an erase voltageto be applied to a bulk (for example, a substrate or a P well).

In the word line rise operation S920 (WL_rise), the second controlcircuit 420 may activate the second command signal COM<2> whilecontrolling different voltages to be applied to a selected word line andan unselected word line. The first control circuit 410 may initialize(S901, L2_rst) the second latch L2 in response to the second commandsignal COM<2>.

In the bit line second-precharge operation S930 (BL_pcg2), the secondcontrol circuit 420 may control a bit line to be precharged to apredetermined voltage level. In the bit line second-precharge operationS930 (BL_pcg2), all bit lines may be precharged to substantially thesame voltage level.

In the evaluation operation S940 (EVAL), the second control circuit 420may control a voltage for turning on the selection transistors DST andSST to be applied to the selection lines DSL and SSL, control a groundvoltage to be applied to the common source line CSL, control a voltagefor verifying a target erase level to be applied to the word lines WL0to WLx, sense data of a memory cell selected through a bit line after apredetermined time lapses, and activate the fourth command signal COM<4>while controlling the data to be stored in the second latch L2. When thefourth command signal COM<4> is activated, the first control circuit 410may control (S902, L2→L3) the data of the second latch L2 to betransmitted to and stored in the third latch L3. The transmission of thedata may be performed after the data of the memory cell sensed throughthe bit line is stored in the second latch L2.

In the bit line discharge operation S950 (BL_dcg), the second controlcircuit 420 may control all bit lines precharged for evaluation to bedischarged to a predetermined voltage level. Then, the second controlcircuit 420 may determine whether erase of a memory cell to be erasedhas been completed according to the value of the data stored in thethird latch L3, and repeat or end the erase operation according to thedetermination result.

As described above, the nonvolatile memory device 400 of FIG. 4 cancontrol the first to third latches L1 to L3 by using the first controlcircuit 410 and control the other elements by using the second controlcircuit 420, thereby simultaneously performing the operations of theother elements and the initialization or data transmission operations ofthe first to third latches L1 to L3. Consequently, an operation time isreduced, so that it is possible to increase an operation speed of thenonvolatile memory device.

Although various embodiments have been described for illustrativepurposes, it will be apparent to those skilled in the art that variouschanges and modifications may be made without departing from the spiritand/or scope of the invention as defined in the following claims.

What is claimed is:
 1. A nonvolatile memory device comprising: aplurality of cell strings including a plurality of memory cells seriallycoupled to one another; a plurality of bit lines coupled to acorresponding cell string of the plurality of cell strings; a pluralityof page buffers each including a plurality of latches and coupled to acorresponding bit line of the plurality of bit lines; a first controlcircuit suitable for controlling the plurality of latches to perform anoperation corresponding to an activated command signal of a plurality ofcommand signals in an access operation; and a second control circuitsuitable for activating one or more of the plurality of command signals,while controlling operations of the plurality of cell strings and theplurality of bit lines in the access operation.
 2. The nonvolatilememory device of claim 1, wherein a period, in which the first controlcircuit controls the plurality of latches at least partially overlaps aperiod in which the second control circuit controls the plurality ofcell strings and the plurality of bit lines.
 3. The nonvolatile memorydevice of claim 1, wherein, in the access operation, the second controlcircuit controls the cell strings and the bit lines to perform aplurality of sub-operations in a predetermined order, and activates acommand signal required for performing the sub-operations.
 4. Thenonvolatile memory device of claim 1, wherein the access operationincludes at least one of a program operation, a read operation, and anerase operation.
 5. The nonvolatile memory device of claim 4, whereineach of the plurality of page buffers includes first to third latches,and the first latch is suitable for storing data inputted to the pagebuffer from an external device or data to be outputted to the externaldevice from the page buffer, the second latch is suitable for storingdata for controlling the bit line or data sensed in the bit line, andthe third latch is suitable for storing data to be substantiallymaintained for a predetermined operation.
 6. The nonvolatile memorydevice of claim 5, wherein, when the access operation is the programoperation, the second control circuit controls a data input operation, abit line first-precharge operation, a program pulse applicationoperation, a word line discharge operation, a word line rise operation,a bit line second-precharge operation, an evaluation operation, and abit line discharge operation to be sequentially performed for theprogram operation, activates a first command signal and a second commandsignal of the plurality of command signals at a predetermined intervalin the data input operation, activates a third command signal in the bitline first-precharge operation, activates the second command signal inthe word line rise operation, and activates a fourth command signal inthe evaluation operation, and the first control circuit controls data ofthe first latch to be transmitted to the third latch when the firstcommand signal is activated, controls the second latch to be initializedwhen the second command signal is activated, controls data of the thirdlatch to be transmitted to the second latch when the third commandsignal is activated, and controls data of the second latch to betransmitted to the third latch when the fourth command signal isactivated.
 7. The nonvolatile memory device of claim 6, wherein, whenthe access operation is the read operation, the second control circuitcontrols the word line rise operation, the bit line second-prechargeoperation, the evaluation operation, the bit line discharge operation,and a data output operation to be sequentially performed for the readoperation, activates the second command signal in the word line riseoperation, activates the fourth command signal in the evaluationoperation, and activates a fifth command signal in the bit linedischarge operation, and the first control circuit controls the data ofthe third latch to be transmitted to the first latch when the fifthcommand sign is activated.
 8. The nonvolatile memory device of claim 7,wherein, when the access operation is the erase operation, the secondcontrol circuit controls an erase pulse application operation, the wordline rise operation, the bit line second-precharge operation, theevaluation operation, and the bit line discharge operation to besequentially performed for the erase operation, activates the secondcommand signal in the word line rise operation, and activates the fourthcommand signal in the evaluation operation.
 9. The nonvolatile memorydevice of claim 8, wherein the first control circuit generates one ormore control signals for controlling the first to third latches andactivates the one or more control signals in an order set by theactivated command signal of the plurality of command signals.
 10. Thenonvolatile memory device of claim 9, wherein the data input operationis an operation in which external data is inputted to the page bufferand is stored in the first latch and the data output operation is anoperation in which the data stored in the first latch is outputted to anexterior of the page buffer.
 11. The nonvolatile memory device of claim10, wherein the program pulse application operation is an operation inwhich a program pulse having a first voltage evel is applied to a wordline coupled to a memory cell to be programmed, the word line dischargeoperation is an operation in which charge of a word line having avoltage level increased due to the program pulse application operationis discharged and a voltage level of the word line is lowered, the wordline rise operation is an operation in which different voltages areapplied to a selected word line and an unselected word line, and theerase pulse application operation is an operation in which an erasepulse having a second voltage level is applied to a word line coupled toa memory cell to be erased.
 12. The nonvolatile memory device of claim11, wherein the bit line first and second-precharge operations areoperations in which the bit line is precharged to a voltage leveldecided by the data stored in the second latch, the evaluation operationis an operation in which data stored in a memory cell selected accordingto a voltage of the bit line is sensed, and the bit line dischargeoperation is an operation in which the precharged bit line isdischarged.
 13. The nonvolatile memory device of claim 1, wherein thefirst control circuit includes a finite state machine and the secondcontrol circuit includes a microcontroller.
 14. A semiconductor devicecomprising: at least one first internal circuit suitable for performinga predetermined first operation when one or more first control signalsamong a plurality of first control signals are activated in apredetermined order; at least one second intern circuit suitable forperforming a predetermined second operation when one or more secondcontrol signals among a plurality of second control signals areactivated in a predetermined order; a first control circuit suitable foractivating the one or more first control signals among the plurality offirst control signals in a predetermined order in response to anactivated command signal among a plurality of command signals; and asecond control circuit suitable for activating the one or more among theplurality of command signals while activating the one or more secondcontrol signals among the plurality of second control signals in apredetermined order.
 15. The semiconductor device of claim 14, wherein awhole or a part of a period, in which the at least one first internalcircuit performs the predetermined first operation, overlaps a whole ora part of a period in which the at least one second internal circuitperforms the predetermined second operation.
 16. The semiconductordevice of claim 14, wherein the semiconductor device is a nonvolatilememory device, the nonvolatile memory device includes a voltagegeneration circuit, a cell array, a peripheral circuit for controllingthe cell array, and a plurality of page buffers, the at least one firstinternal circuit includes the plurality of page buffers, and the atleast one second internal circuit includes the voltage generationcircuit, the cell array, and the peripheral circuit.
 17. Thesemiconductor device of claim 14, wherein the first control circuitincludes a finite state machine and the second control circuit includesa microcontroller.
 18. A method for operating a semiconductor deviceincluding first and second control circuits and a plurality of internalcircuits, comprising: activating, by the second control circuit, aplurality of second control signals in a predetermined order in responseto an external command, and activating one or more command signals amonga plurality of command signals at a predetermined time point;activating, by the first control circuit, a plurality of first controlsignals in a predetermined order in response to one or more activatedcommand signals among the plurality of command signals; performing, by afirst internal circuit among the plurality of internal circuits, apredetermined operation in response to the plurality of second controlsignals; and performing, by a second internal circuit among theplurality of internal circuits, a predetermined operation in response tothe plurality of first control signals.
 19. The method of claim 18,wherein a whole or a part of a period, in which the first internalcircuit performs the predetermined operation in response to theplurality of first control signals, overlaps a whole or a part of aperiod in which the second internal circuit performs the predeterminedoperation in response to the plurality of second control signals. 20.The method of claim 19, wherein the semiconductor device is anonvolatile memory device the nonvolatile memory device includes avoltage generation circuit, a cell array, a peripheral circuit forcontrolling the cell array, and a plurality of page buffers, the secondinternal circuit, which performs the predetermined operation in responseto the plurality of first control signals, include the plurality of pagebuffers, and the first internal circuit, which the predeterminedoperation in response to the plurality of second control signals,include the voltage generation circuit, the cell array, and theperipheral circuit.